The wide bandgap II-VI semiconductors offer new exciting possibilities for applications in optoelectronics and spintronics. A revolutionary breakthrough in overhead illumination, in picture transmission and in visualization techniques is expected through the introduction of short wavelength emitting LEDs and LDs. Blue/violet color light sources are based on nitrides, but green color is a problem at present. There are some hopes that ZnSe-based structures will be good for such applications. Also ZnO is a promising material for applications in optoelectronics, but also in spintronics, if doped with magnetic impurities.
The application of wide bandgap II-VI materials in these fields requires important breakthroughs in growth techniques, defect control, doping procedures, etc... Knowledge about defect structures in these materials can help to predict their optical properties and solve problems related to degradation, which occurs in ZnSe-based devices under extreme working conditions, such as high current density, high working temperature and high intensity of light fields.
This E-MRS Symposium is aimed to discuss recent progress in these research fields. Material properties, but also applications of new materials in optoelectronic will be discussed. The symposium will provide a forum for presentation and exchange of new ideas and prospects for their future applications.
Plenary session, invited lectures, reports on original works and poster presentations are planned to cover the topics shown below:
Preliminary list of invited speakers:
Symposium is organised by:
Website address is http://www.e-mrs.org/meetings/fall2004/sympF.
Contact e-mail address: mycie@ifpan.edu.pl.
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