Symposium C

Programme

III-nitrides and related, wide-bandgap materials gain a lot of interest in the semiconductor community. They have proven a great importance in short wavelength optoelectronics and high temperature electronics. They are used in a new generation of LEDs that are replacing present light emitting devices; in blue and UV-lasers that can increase information storing capacity; and for UV-detectors used in medicine, safety and monitoring of environment purity. High-temperature resistance of GaN, SiC and related materials leads to construction of better higher power electronic devices.

The crucial point for development of high performance devices is the material quality, so the advances in technology of nitride growth (MOCVD, MBE, bulk) will be an important topic of the symposium.

The nitrides have also very interesting, basic physical properties, especially due to its wide bandgap, rich excitonic structure and high electric fields connected with spontaneous and piezoelectric polarization.

This E-MRS Symposium organized in a workshop style will be devoted to growth, device technology, characterization techniques and characteristic physical phenomena of III-nitrides and similar wide-bandgap materials. Its objective is to bring together a wide range of specialists from universities, research institutes and industrial laboratories, as well as post-graduate students, and young scientists actively working on wide-bandgap materials. Applications of new materials for microelectronic and optoelectronic, in particular for applications in telecommunication, will be discussed. The most recent progress in the fundamental and applied aspects of these materials will be presented in invited lectures (45 min, including discussion), contributed presentations (20 min, including discussion) and posters.

A plenary session, invited lectures, reports on original works and poster presentations are planned to cover the topics shown below
1. Physics of dislocations, defects, strong electric fields.
2. Optical properties of III-nitrides and related, wide-bandgap materials.
3. New developments in growing techniques of nitrides and related materials.
4. Solar-blind and visible-blind photodetectors.
5. Progress in high temperature, high power electronics.
6. Blue and UV semiconductor lasers and laser materials.
7. New perspectives in wide-bandgap semiconductors applications.

The symposium will begin on September 7th and many of its program events will take place at last days of the E-MRS Meeting, in order to enable participants to take part also in symposium F: "Wide Band Gap II-VI Semiconductors".

Scientific Committee:
• Oliver Ambacher (Technical University Ilmenau (ZMN), Germany)
• Peder Bergman (Linkping University, Sweden)
• Marek Godlewski (Institute of Physic PAS, Warsaw, Poland)
• Hilde Hardtdegen, (Research Center J|lich, Germany)
• Detlef Hommel (University of Bremen, Germany)
• Pierre Lefebvre (Universite Montpellier 2 (GES), France)
• Tadeusz Suski (High Pressure Research Center "Unipress", Warsaw, Poland)

Preliminary list of invited speakers:
• Fernando Calle (Universidad Politécnica de Madrid, Spain), "Acoustic Wave Devices on III-V Nitrides"
• Jürgen Christen (Universität Magdeburg, Magdeburg, Germany) , "Cathodoluminescence of Nitrides"
• Jean-Yves Duboz (CRH, Valbonne, France) , "Solar Blind Detectors Based on AlGaN"
• Martin Eickhoff (TU München, Garching, Germany) , "Properties and Applications of Group-III-Nitrides Solution-Gate Field-Effect Transistors"
• Marie-Antoinette di Forte-Poisson (Thales R& T - France), "MOCVD Growth of Nitrides for High Power, High Frequency Applications"
• Jacek Jasiñski (LBNL, Berkeley & UC, Merced, CA, USA), " 'Classic' and Novel Methods of Dislocation Reduction in Heteroepitaxial NitrideLayers"
• Dave C. Look (AFRL/MLPS, Wright-Patterson AFB, OH, USA), "Giant Traps in GaN and SiC: Pores and Dislocations"
• Jacek A. Majewski (TU München, Germany + Warsaw University, Poland), "Nitrides for Spintronics - Magnetic Moments and Spin Lifetimes in Nitrides"
• Bo Monemar, (Linköping University, Sweden), "Properties of Nitrides Growth by HVPE"
• Shuji Nakamura (U.C. Santa Barbara, CA, USA), "GaN Crystal Growth and Light Emitting Devices"
• Thomas Zettler (LayTec, Berlin, Germany), "Optical In-Situ Monitoring of the III-Nitride Growth"

Organisers

Symposium is organised by:

• Jacek Baranowski, Institute of Experimental Physics, Warsaw University
• Stanisaw Krukowski, High Pressure Research Center, Polish Academy of Sciences (UNIPRESS)
• Krzysztof Korona, Institute of Experimental Physics, Warsaw University

Contact

Website address is http://www.e-mrs.org/meetings/fall2004/sympA.

Contact e-mail address: kkorona@fuw.edu.pl.